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| 2SK3677-01MR FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation Voltage Symbol VDS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg Viso *6 Ratings 700 700 12 48 30 12 276.7 40 5 2.16 95 +150 -55 to +150 2 Unit V V A A V A mJ kV/s kV/s W C C kVrms Equivalent circuit schematic Drain(D) Gate(G) Source(S) < *1 L=3.53mH, Vcc=70V,Tch=25C, See to Avalanche Energy Graph *2 Tch=150C < < <700V *5 VGS=-30V *6 t=60sec, f=60Hz < *3 IF=-ID, -di/dt=50A/s, Vcc=BVDSS, Tch=150C *4 VDS = Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID=250A VGS=0V ID= 250A VDS=VGS VDS=700V VGS=0V Tch=25C Tch=125C VDS=560V VGS=0V VGS=30V VDS=0V ID=6A VGS=10V ID=6A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=6A VGS=10V RGS=10 VCC=350V ID=12A VGS=10V L=3.53mH Tch=25C IF=12A VGS=0V Tch=25C IF=12A VGS=0V -di/dt=100A/s Tch=25C Min. 700 3.0 Typ. Max. 5.0 25 250 100 0.93 Units V V A nA S pF 6 0.72 12 1100 1650 170 255 11 17 24.5 36 7.5 12 47.5 72 10 17 31 46.5 4.5 8 11 16.5 12 0.90 2.6 16.0 ns nC 1.50 A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.316 58.0 Units C/W C/W 1 2SK3677-01MR Characteristics FUJI POWER MOSFET 120 Allowable Power Dissipation PD=f(Tc) 20 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25C 20V 10V 8.0V 7.0V 15 100 80 ID [A] PD [W] 6.5V 10 60 40 5 20 VGS=5.5V 0 0 25 50 75 100 125 150 0 0 5 10 15 20 25 6.0V Tc [C] VDS [V] Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 10 100 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C ID[A] 1 gfs [S] 0 1 2 3 4 5 6 7 8 9 10 10 0.1 1 0.1 1 10 VGS[V] ID [A] 1.4 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C VGS=5.5V 6.0V 6.5V 2.5 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6A,VGS=10V 1.3 2.0 1.2 RDS(on) [ ] 1.1 8.0V 10V 20V RDS(on) [ ] 7.0V 1.5 max. 1.0 typ. 1.0 0.9 0.8 0.5 0.7 0.0 0 5 10 15 20 -50 -25 0 25 50 75 100 125 150 0.6 ID [A] Tch [C] 2 2SK3677-01MR FUJI POWER MOSFET 7.0 6.5 6.0 5.5 5.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A 12 Typical Gate Charge Characteristics VGS=f(Qg):ID=12A,Tch=25C 10 max. 8 Vcc= 140V 350V 560V VGS(th) [V] 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. VGS [V] 6 4 2 0 0 5 10 15 20 25 30 35 40 Tch [C] Qg [nC] 10 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C 10 0 Ciss 10 C [nF] 10 -1 Coss IF [A] 1 0.1 0.00 10 -2 Crss 10 -3 10 0 10 1 10 2 0.25 0.50 0.75 1.00 1.25 1.50 VDS [V] VSD [V] 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 700 Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=70V IAS=5A 600 tf 500 10 2 td(off) IAS=8A EAS [mJ] 400 t [ns] td(on) 10 1 300 IAS=12A tr 200 100 10 0 0 -1 10 10 0 10 1 0 25 50 75 100 125 150 ID [A] starting Tch [C] 3 2SK3677-01MR Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=70V FUJI POWER MOSFET 10 2 [A] Single Pulse 10 1 Avalanche Current I AV 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4 |
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